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| SFF10N60 Silicon N-Channel MOSFET Features 10A,600V ,RDS(on)(Max0.75)@VGS=10V Ultra-low Gate Charge(34nC) Fast Switching Capability 100%Avalanche Tested Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half bridge. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current (@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above25 TJ,Tstg TL Junction and Storage Temperature Channel Temperature 0.4 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25) (Note2) (Note1) (Note3) (Note1) 6.0* 40* 30 713 18 4.5 50 A A V mJ mJ V/ns W Drain Source Voltage Continuous Drain Current (@Tc=25) Parameter Value 600 10* Units V A *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 2.5 62.5 Units /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFF10N60 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward Trans conductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain Gate-source charge Gate-drain("miller")Charge Qgs Qgd VGS=10V, nC ID=10A (Note4,5) 6.9 12 tf toff VDD=480V, 34 45 RG=25 (Note4,5) 214 85 300 165 Symbol IGSS V(BR)GSS IDSS V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=30V,VDS=0V IG=10A,VDS=0V VDS=600V,VGS=0V ID=250A,VGS=0V VDS=10V,ID=250A VGS=10V,ID=4.75A VDS=50V,ID=4.75A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=10A, Min 30 500 3 - Type 0.66 8.2 1610 156 20 68 109 Max 100 1 3.5 0.75 2065 210 26 91 150 Unit nA V A V V S pF ns Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test condition IDR=10A,VGS=0V IDR=10A,VGS=0V, dIDR /dt=100 A / s Min - Type 1.05 442 2.16 Max 10 38 1.4 633 3.24 Unit A A V ns C Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=14.5mH, IAS=10A, VDD=50V, RG=25, Starting TJ=25 3. ISD10A, di/dt300A/us, VDD Steady, all for your advance SFF10N60 Fig.1 On -State Characteristics Fig.2 Transfer characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.4 On-Resistance Variation Energy vs Drain Current and Gate Voltage Fig.5 On-Resistance Variation vs Junction temperature Fig.6 Gate Charge characteristics 3/7 Steady, all for your advance SFF10N60 Fig.7 Maximum Safe Operation Area Fig.8 diode Forward voltage Variation vs Source Current and Temperature Fig.9 Transient Thermal response Curve 4/7 Steady, all for your advance SFF10N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive switching Test Circuit& Waveform 5/7 Steady, all for your advance SFF10N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFF10N60 TO-220F Package Dimension Unit :mm 7/7 Steady, all for your advance |
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